Microsemi TPR1000A RF BJT
TPR1000A by Microsemi · RF BJT · 55KV
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TPR1000A
Package
55KV
Lifecycle Status
Obsolete
Datasheet
TPR1000A Datasheet
Quick Jump:
Technical Specifications
Microsemi TPR1000A RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200 °C
Lifecycle Status
Obsolete
Current Collector IC Max
80 A
Dc Current Gain Hfe Min IC Vce
10 @ 1A, 5V
Frequency Transition
1.09 GHz
Gain
6dB
Power Max
2900 W
Voltage Collector Emitter Breakdown Max
65 V
Alternate Parts Comparison (TPR1000A vs TPR175 vs TPR700 vs TPR400)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Bulk | 55CX | Bulk | Bulk |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Operating Temperature | 200 °C | 200°C (TJ) | 200°C (TJ) | 200°C (TJ) |
| Current Collector IC Max | 80 A | 9A | 55 A | 30 A |
| Dc Current Gain Hfe Min IC Vce | 10 @ 1A, 5V | 10 @ 20mA, 5V | 10 @ 1A, 5V | 10 @ 2.5A, 5V |
| Frequency Transition | 1.09 GHz | 1.03GHz ~ 1.09GHz | 1.03GHz ~ 1.09GHz | 1.03GHz ~ 1.09GHz |
| Gain | 6dB | 8dB ~ 9dB | 6.7dB | 7.27dB |
| Power Max | 2900 W | 290W | 2050 W | 875 W |
| Voltage Collector Emitter Breakdown Max | 65 V | 55V | 65 V | 55 V |
| Lifecycle Status | Obsolete | -- | Obsolete | Obsolete |
| Transistor Type | -- | NPN | NPN | NPN |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.