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Microsemi TPR1000 RF BJT

TPR1000 by Microsemi · RF BJT · 55KV

In StockMicrosemi55KV
TPR1000 55KV package illustration

Same model may have multiple batches, images only for reference.

TPR1000
Manufacturer
Part Number (MPN)
TPR1000
Package
55KV
Lifecycle Status
Obsolete
Datasheet
PDF TPR1000 Datasheet
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Technical Specifications

Microsemi TPR1000 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
80 A
Dc Current Gain Hfe Min IC Vce
10 @ 1A, 5V
Frequency Transition
1.09 GHz
Gain
6dB
Power Max
2900 W
Transistor Type
NPN

Alternate Parts Comparison (TPR1000 vs TPR175 vs TPR700 vs TPR1000A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulk55CXBulkBulk
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200 °C
Current Collector IC Max80 A9A55 A80 A
Dc Current Gain Hfe Min IC Vce10 @ 1A, 5V10 @ 20mA, 5V10 @ 1A, 5V10 @ 1A, 5V
Frequency Transition1.09 GHz1.03GHz ~ 1.09GHz1.03GHz ~ 1.09GHz1.09 GHz
Gain6dB8dB ~ 9dB6.7dB6dB
Power Max2900 W290W2050 W2900 W
Voltage Collector Emitter Breakdown Max65 V55V65 V65 V
Lifecycle StatusObsolete--ObsoleteObsolete
Transistor TypeNPNNPNNPN--
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