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Microsemi MS2473 RF BJT

MS2473 by Microsemi · RF BJT · M112

In Stock ActiveMicrosemiM112
MS2473 M112 package illustration

Same model may have multiple batches, images only for reference.

MS2473
Manufacturer
Part Number (MPN)
MS2473
Package
M112
Lifecycle Status
Active
Datasheet
PDF MS2473 Datasheet
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Technical Specifications

Microsemi MS2473 RF BJT technical specifications.

General

RoHS
Yes
Technology
Si
Package
M112

Alternate Parts Comparison (MS2473 vs MS2201 vs MS1001 vs MS2203)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackageM112M220----
TechnologySi--Si--
Package / Case--M220M174M220
Mounting Type--Chassis MountChassis MountChassis Mount
Operating Temperature--200°C (TJ)200°C (TJ)200°C (TJ)
Current Collector IC Max--250mA20A300mA
Dc Current Gain Hfe Min IC Vce--0.95 @ 10mA, 5V20 @ 5A, 5V120 @ 100mA, 5V
Frequency Transition--1.025GHz ~ 1.15GHz30MHz1.09GHz
Gain--9dB13dB10.8dB ~ 12.3dB
Power Max--10W270W5W
Transistor Type--NPNNPNNPN
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