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Microsemi MS2472 RF BJT

MS2472 by Microsemi · RF BJT · M112

In StockMicrosemiM112
MS2472 M112 package illustration

Same model may have multiple batches, images only for reference.

MS2472
Manufacturer
Part Number (MPN)
MS2472
Package
M112
Lifecycle Status
Obsolete
Datasheet
PDF MS2472 Datasheet
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Technical Specifications

Microsemi MS2472 RF BJT technical specifications.

General

RoHS
No
Number of Pins
2
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
40 A
Dc Current Gain Hfe Min IC Vce
5 @ 250mA, 5V
Frequency Transition
1.025GHz ~ 1.15GHz
Gain
5.6dB

Alternate Parts Comparison (MS2472 vs MS2201 vs MS1001 vs MS2203)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M174M220
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C (TJ)
RoHSNoYesYesYes
Current Collector IC Max40 A250mA20A300mA
Dc Current Gain Hfe Min IC Vce5 @ 250mA, 5V0.95 @ 10mA, 5V20 @ 5A, 5V120 @ 100mA, 5V
Frequency Transition1.025GHz ~ 1.15GHz1.025GHz ~ 1.15GHz30MHz1.09GHz
Gain5.6dB9dB13dB10.8dB ~ 12.3dB
Power Max1350 W10W270W5W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max65 V45V18V20V
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