Microsemi MRF8372GR2 RF BJT
MRF8372GR2 by Microsemi · RF BJT · 8-SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MRF8372GR2
Package
8-SOIC
Lifecycle Status
Obsolete
Datasheet
MRF8372GR2 Datasheet
Quick Jump:
Technical Specifications
Microsemi MRF8372GR2 RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
16V
Frequency Transition
870MHz
Gain
8dB ~ 9.5dB
Power Max
2.2W
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 5V
Current Collector IC Max
200mA
Alternate Parts Comparison (MRF8372GR2 vs MRF517 vs MRF555 vs MRF581A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Through Hole | Surface Mount | SMD/SMT |
| Transistor Type | NPN | NPN | NPN | Bipolar |
| RoHS | Yes | Yes | -- | Yes |
| Current Collector IC Max | 200mA | 150mA | 500 mA | -- |
| Dc Current Gain Hfe Min IC Vce | 30 @ 50mA, 5V | 50 @ 60mA, 10V | 30 @ 250mA, 5V | -- |
| Gain | 8dB ~ 9.5dB | 9dB ~ 10dB | 11dB ~ 13dB | -- |
| Package | 8-SOIC | TO-205 | -- | Micro-X ceramic (84C) |
| Power Max | 2.2W | 2.5W | 3 W | -- |
| Voltage Collector Emitter Breakdown Max | 16V | 20V | 16 V | -- |
| Action |
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