Microsemi MRF581A RF BJT
MRF581A by Microsemi · RF BJT · Micro-X ceramic (84C)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MRF581A
Package
Micro-X ceramic (84C)
Lifecycle Status
Active
Datasheet
MRF581A Datasheet
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Technical Specifications
Microsemi MRF581A RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
Operating Frequency
1 GHz
Dc Collector Base Gain Hfe Min
90
Collector Emitter Voltage Vceo Max
15 V
Emitter Base Voltage Vebo
2.5 V
Alternate Parts Comparison (MRF581A vs MRF517 vs MRF555 vs MRF4427R2)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Through Hole | Surface Mount | Surface Mount |
| Transistor Type | Bipolar | NPN | NPN | NPN |
| Package / Case | -- | TO-205AD, TO-39-3 Metal Can | Power Macro | Bulk |
| Current Collector IC Max | -- | 150mA | 500 mA | 400 mA |
| Dc Current Gain Hfe Min IC Vce | -- | 50 @ 60mA, 10V | 30 @ 250mA, 5V | 10 @ 10mA, 5V |
| Gain | -- | 9dB ~ 10dB | 11dB ~ 13dB | 20dB |
| Power Max | -- | 2.5W | 3 W | 1.5 W |
| Voltage Collector Emitter Breakdown Max | -- | 20V | 16 V | 20 V |
| Action |
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