Microsemi MRF8372GR1 RF BJT
MRF8372GR1 by Microsemi · RF BJT · 8-SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MRF8372GR1
Package
8-SO
Lifecycle Status
Obsolete
Datasheet
MRF8372GR1 Datasheet
Quick Jump:
Technical Specifications
Microsemi MRF8372GR1 RF BJT technical specifications.
General
Package / Case
Tape & Reel
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Current Collector IC Max
200 mA
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 5V
Frequency Transition
870 MHz
Gain
8dB ~ 9.5dB
Power Max
2.2 W
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
16 V
Alternate Parts Comparison (MRF8372GR1 vs MRF517 vs MRF555 vs MRF581A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Through Hole | Surface Mount | SMD/SMT |
| Transistor Type | NPN | NPN | NPN | Bipolar |
| Package / Case | Tape & Reel | TO-205AD, TO-39-3 Metal Can | Power Macro | -- |
| Current Collector IC Max | 200 mA | 150mA | 500 mA | -- |
| Dc Current Gain Hfe Min IC Vce | 30 @ 50mA, 5V | 50 @ 60mA, 10V | 30 @ 250mA, 5V | -- |
| Gain | 8dB ~ 9.5dB | 9dB ~ 10dB | 11dB ~ 13dB | -- |
| Power Max | 2.2 W | 2.5W | 3 W | -- |
| Voltage Collector Emitter Breakdown Max | 16 V | 20V | 16 V | -- |
| Action |
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