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Microsemi MRF8372G RF BJT

MRF8372G by Microsemi · RF BJT · 8-SO

In StockMicrosemi8-SO
MRF8372G 8-SO package illustration

Same model may have multiple batches, images only for reference.

MRF8372G
Manufacturer
Part Number (MPN)
MRF8372G
Package
8-SO
Lifecycle Status
Obsolete
Datasheet
PDF MRF8372G Datasheet
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Technical Specifications

Microsemi MRF8372G RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Current Collector IC Max
200 mA
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 5V
Frequency Transition
870 MHz
Gain
8dB ~ 9.5dB
Power Max
2.2 W
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
16 V

Alternate Parts Comparison (MRF8372G vs MRF517 vs MRF555 vs MRF581A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountThrough HoleSurface MountSMD/SMT
Transistor TypeNPNNPNNPNBipolar
Package / CaseBulkTO-205AD, TO-39-3 Metal CanPower Macro--
Current Collector IC Max200 mA150mA500 mA--
Dc Current Gain Hfe Min IC Vce30 @ 50mA, 5V50 @ 60mA, 10V30 @ 250mA, 5V--
Gain8dB ~ 9.5dB9dB ~ 10dB11dB ~ 13dB--
Power Max2.2 W2.5W3 W--
Voltage Collector Emitter Breakdown Max16 V20V16 V--
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