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Microsemi JAN2N4957 RF BJT

JAN2N4957 by Microsemi · RF BJT · TO-72-3MetalCan

In StockMicrosemiTO-72-3MetalCan
JAN2N4957 TO-72-3MetalCan package illustration

Same model may have multiple batches, images only for reference.

JAN2N4957
Manufacturer
Part Number (MPN)
JAN2N4957
Package
TO-72-3MetalCan
Lifecycle Status
Obsolete
Datasheet
PDF JAN2N4957 Datasheet
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Technical Specifications

Microsemi JAN2N4957 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
30V
Noise Figure Db Typ F
3.5dB @ 450MHz
Gain
25dB
Power Max
200mW
Dc Current Gain Hfe Min IC Vce
30 @ 5mA, 10V

Related Parts Comparison (JAN2N4957 vs JAN2N2857UB vs JAN2N2857 vs JANTX2N2857UB)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleSurface MountThrough Hole--
Operating Temperature-65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)--
RoHSYes--YesYes
Lifecycle StatusObsoleteObsoleteObsolete--
Current Collector IC Max30mA40 mA40mA--
Dc Current Gain Hfe Min IC Vce30 @ 5mA, 10V30 @ 3mA, 1V30 @ 3mA, 1V--
Gain25dB21dB12.5dB ~ 21dB @ 450MHz--
Noise Figure Db Typ F3.5dB @ 450MHz4.5dB @ 450MHz4.5dB @ 450MHz--
PackageTO-72-3MetalCan--TO-72-3MetalCanCase UB-4
Power Max200mW200 mW200mW--
Transistor TypePNPNPNNPN--
Voltage Collector Emitter Breakdown Max30V15 V15V--
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