Diodes Incorporated DMT6013LFDF-7 MOSFETs
MOSFET N-CH 60V 10A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT6013LFDF-7
Detailed Description
MOSFET N-CH 60V 10A 6UDFN
Package
U-DFN2020-6
Lifecycle Status
Active
Datasheet
DMT6013LFDF-7 Datasheet
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Technical Specifications
Diodes Incorporated DMT6013LFDF-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
10 A
Rds on Drain Source Resistance
15 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (DMT6013LFDF-7 vs DMT6012LFV-13 vs DMN1014UFDF-7 vs DMP1009UFDFQ-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.002293 oz | 0.002293 oz | 0.002293 oz | 0.002293 oz |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| Fall Time | 6.1 ns | 8.5 ns | -- | 61 ns |
| ID Continuous Drain Current | 10 A | 9.5 A | -- | 11 A |
| Pd Power Dissipation | 10.8 W | 11 W | -- | 800 mW |
| Action |
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