Diodes Incorporated DMN1004UFDF-7 MOSFETs
MOSFET N-CH 12V 15A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN1004UFDF-7
Detailed Description
MOSFET N-CH 12V 15A 6UDFN
Package
U-DFN2020-6
Lifecycle Status
Active
Datasheet
DMN1004UFDF-7 Datasheet
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Technical Specifications
Diodes Incorporated DMN1004UFDF-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
15 A
Rds on Drain Source Resistance
4.1 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN1004UFDF-7 vs DMN1014UFDF-7 vs DMN2025UFDF-7 vs DMN10H220LFDF-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.002293 oz | 0.002293 oz | 0.002293 oz | 0.002293 oz |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 16.9 ns | -- | 9.3 ns | 4.2 ns |
| ID Continuous Drain Current | 15 A | -- | 6.5 A | 2.2 A |
| Pd Power Dissipation | 2.1 W | -- | 1.6 W | 1.1 W |
| Action |
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