Diodes Incorporated DMN10H220LFDF-7 MOSFETs
MOSFET BVDSS: 61V~100V U-DFN2020
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN10H220LFDF-7
Base Model
Detailed Description
MOSFET BVDSS: 61V~100V U-DFN2020
Package
U-DFN2020-6
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN10H220LFDF-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
2.2 A
Rds on Drain Source Resistance
225 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN10H220LFDF-7 vs DMN10H099SK3-13 vs DMN10H100SK3-13 vs DMN10H220LK3-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | U-DFN2020-6 | TO-252-3 | TO-252-3 | TO-252-3 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 4.2 ns | -- | -- | -- |
| ID Continuous Drain Current | 2.2 A | -- | -- | -- |
| Pd Power Dissipation | 1.1 W | -- | -- | -- |
| Qg Gate Charge | 3.7 nC, 6.7 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 225 mOhms | -- | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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