Diodes Incorporated DMT6012LFV-13 MOSFETs
MOSFET N-CH 60V 43.3A PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT6012LFV-13
Detailed Description
MOSFET N-CH 60V 43.3A PWRDI3333
Package
U-DFN2020-6
Lifecycle Status
Active
Datasheet
DMT6012LFV-13 Datasheet
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Technical Specifications
Diodes Incorporated DMT6012LFV-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
9.5 A
Rds on Drain Source Resistance
14 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMT6012LFV-13 vs DMT6013LFDF-7 vs DMN1014UFDF-7 vs DMTH6016LFDFW-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.002293 oz | 0.002293 oz | 0.002293 oz | 0.002293 oz |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | - 55°C ~ + 175°C |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| Fall Time | 8.5 ns | 6.1 ns | -- | 7.2 ns |
| ID Continuous Drain Current | 9.5 A | 10 A | -- | 9.4 A |
| Pd Power Dissipation | 11 W | 10.8 W | -- | 2.3 W |
| Action |
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