Diodes Incorporated DMP1009UFDFQ-7 MOSFETs
MOSFET P-CH 12V 11A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP1009UFDFQ-7
Base Model
Detailed Description
MOSFET P-CH 12V 11A 6UDFN
Package
U-DFN2020-6
Lifecycle Status
Active
Datasheet
DMP1009UFDFQ-7 Datasheet
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Technical Specifications
Diodes Incorporated DMP1009UFDFQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
11 A
Rds on Drain Source Resistance
11 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMP1009UFDFQ-7 vs DMP1009UFDF-7 vs DMP4015SK3Q-13 vs DMP1005UFDF-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 61 ns | 61 ns | 137.9 nS | 125 ns |
| ID Continuous Drain Current | 11 A | 11 A | 35 A | 26 A |
| Package | U-DFN2020-6 | U-DFN2020-6 | TO-252-3 | U-DFN2020-6 |
| Pd Power Dissipation | 800 mW | 2 W | 3.5 W | 2.1 W |
| Qg Gate Charge | 44 nC | 44 nC | 47.5 nC | 47 nC |
| Rds on Drain Source Resistance | 11 mOhms | 8.3 mOhms | 11 mOhms | 5.8 mOhms |
| Rise Time | 10.6 ns | 10.6 ns | 10 ns | 21 ns |
| Action |
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