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Diodes Incorporated DMP31D0UFB4-7B MOSFETs

MOSFET P-CH 30V 540MA 3DFN

9,845 ActiveDiodes IncorporatedDMP31DX2-DFN1006-3$0.09RoHS
DMP31D0UFB4-7B X2-DFN1006-3 package illustration

Same model may have multiple batches, images only for reference.

DMP31D0UFB4-7B
Part Number (MPN)
DMP31D0UFB4-7B
Base Model
Detailed Description
MOSFET P-CH 30V 540MA 3DFN
Package
X2-DFN1006-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
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Ordering Code Family

DMP31D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMP31D0UFB4-7B MOSFETs technical specifications.

General

Series
DMP31
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
760 mA
Rds on Drain Source Resistance
450 mOhms

Alternate Parts Comparison (DMP31D0UFB4-7B vs DMP31D0U-7 vs DMP31D7LDW-7 vs DMP31D7L-13)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Number of Channels1 Channel1 Channel2 Channel1 Channel
RoHSYesYesYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleDualSingle
ID Continuous Drain Current760 mA530 mA550 mA580 mA
PackageX2-DFN1006-3SOT23-3SOT-363SOT23-3
Pd Power Dissipation460 mW710 mW290 mW430 mW
Qg Gate Charge1.5 nC1.5 nC800 pC360 pC
Rds on Drain Source Resistance450 mOhms2 Ohms900 mOhms900 mOhms
TechnologySiSiSiSi
Transistor PolarityP-ChannelP-ChannelP-ChannelP-Channel
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