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Diodes Incorporated DMP31D0UFB4-7B MOSFETs

MOSFET P-CH 30V 540MA 3DFN

9,845 ActiveDiodes IncorporatedDMP31DX2-DFN1006-3$0.09RoHS
DMP31D0UFB4-7B X2-DFN1006-3 package illustration

Same model may have multiple batches, images only for reference.

DMP31D0UFB4-7B
Part Number (MPN)
DMP31D0UFB4-7B
Base Model
Detailed Description
MOSFET P-CH 30V 540MA 3DFN
Package
X2-DFN1006-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
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Ordering Code Family

DMP31D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMP31D0UFB4-7B MOSFETs technical specifications.

General

Series
DMP31
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
760 mA
Rds on Drain Source Resistance
450 mOhms

Related Parts Comparison (DMP31D0UFB4-7B vs DMP31D0U-7 vs DMP31D7LDW-7 vs DMP31D7L-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Number of Channels1 Channel1 Channel2 Channel1 Channel
RoHSYesYesYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleDualSingle
ID Continuous Drain Current760 mA530 mA550 mA580 mA
PackageX2-DFN1006-3SOT23-3SOT-363SOT23-3
Pd Power Dissipation460 mW710 mW290 mW430 mW
Qg Gate Charge1.5 nC1.5 nC800 pC360 pC
Rds on Drain Source Resistance450 mOhms2 Ohms900 mOhms900 mOhms
TechnologySiSiSiSi
Transistor PolarityP-ChannelP-ChannelP-ChannelP-Channel
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