Diodes Incorporated DMP31D7LDW-7 MOSFETs
MOSFET 2P-CH 0.55A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP31D7LDW-7
Base Model
Detailed Description
MOSFET 2P-CH 0.55A SOT363
Package
SOT-363
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMP31D7LDW-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
550 mA
Rds on Drain Source Resistance
900 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMP31D7LDW-7 vs DMP31D0U-7 vs DMP31D0UFB4-7B vs DMP31D7L-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Single | Single | Single |
| ID Continuous Drain Current | 550 mA | 530 mA | 760 mA | 580 mA |
| Package | SOT-363 | SOT23-3 | X2-DFN1006-3 | SOT23-3 |
| Pd Power Dissipation | 290 mW | 710 mW | 460 mW | 430 mW |
| Qg Gate Charge | 800 pC | 1.5 nC | 1.5 nC | 360 pC |
| Rds on Drain Source Resistance | 900 mOhms | 2 Ohms | 450 mOhms | 900 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Action |
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