Diodes Incorporated DMN2300UFB4-7B MOSFETs
MOSFET N-CH 20V 1.3A 3DFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2300UFB4-7B
Base Model
Detailed Description
MOSFET N-CH 20V 1.3A 3DFN
Package
X2-DFN1006-3
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN2300UFB4-7B MOSFETs technical specifications.
General
Series
DMN2300
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1.3 A
Rds on Drain Source Resistance
175 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN2300UFB4-7B vs DMN2300UFB-7B vs DMN3730UFB4-7B vs DMN2450UFB4-7B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | X2-DFN1006-3 | X1-DFN1006-3 | X2-DFN1006-3 | X2-DFN1006-3 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Single | -- | -- | Single |
| Fall Time | 13 ns | -- | -- | 5.6 ns |
| ID Continuous Drain Current | 1.3 A | -- | -- | 900 mA |
| Pd Power Dissipation | 500 mW | -- | -- | 890 mW |
| Qg Gate Charge | 1.6 nC | -- | -- | 700 pC |
| Rds on Drain Source Resistance | 175 mOhms | -- | -- | 600 mOhms |
| Rise Time | 2.8 ns | -- | -- | 2.4 ns |
| Action |
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