Diodes Incorporated DMN2450UFB4-7B MOSFETs
MOSFET N-CH 20V 1A X2-DFN1006-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2450UFB4-7B
Detailed Description
MOSFET N-CH 20V 1A X2-DFN1006-3
Package
X2-DFN1006-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN2450UFB4-7B MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
900 mA
Rds on Drain Source Resistance
600 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Related Parts Comparison (DMN2450UFB4-7B vs DMN3730UFB4-7B vs DMN63D8LDWQ-7 vs DMN2300UFB4-7B)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | X2-DFN1006-3 | X2-DFN1006-3 | TSSOP-6 | X2-DFN1006-3 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 2 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Dual | Single |
| Fall Time | 5.6 ns | -- | 6.3 ns, 6.3 ns | 13 ns |
| ID Continuous Drain Current | 900 mA | -- | 220 mA | 1.3 A |
| Pd Power Dissipation | 890 mW | -- | 300 mW | 500 mW |
| Qg Gate Charge | 700 pC | -- | 870 pC | 1.6 nC |
| Rds on Drain Source Resistance | 600 mOhms | -- | 2.8 Ohms, 2.8 Ohms | 175 mOhms |
| Rise Time | 2.4 ns | -- | 3.2 ns, 3.2 ns | 2.8 ns |
| Action |
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