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Diodes Incorporated DMP21D6UFB4-7B MOSFETs

MOSFET P-CH 20V 580MA 3DFN

9,450 ActiveDiodes IncorporatedDMP21DX2-DFN1006-3$0.11RoHS
DMP21D6UFB4-7B X2-DFN1006-3 package illustration

Same model may have multiple batches, images only for reference.

DMP21D6UFB4-7B
Part Number (MPN)
DMP21D6UFB4-7B
Base Model
Detailed Description
MOSFET P-CH 20V 580MA 3DFN
Package
X2-DFN1006-3
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
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Ordering Code Family

DMP21D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

8 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMP21D6UFB4-7B MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
580 mA
Rds on Drain Source Resistance
1 Ohms
Vgs Gate Source Voltage
- 8 V, + 8 V

Related Parts Comparison (DMP21D6UFB4-7B vs DMP21D0UFD-7 vs DMP21D0UT-7 vs DMP21D0UFB4-7B)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageX2-DFN1006-3X1-DFN1212-3SOT-523X2-DFN1006-3
Mounting TypeSMD/SMT--SMD/SMTSMD/SMT
Number of Channels1 Channel--1 Channel1 Channel
Channel ModeEnhancement--EnhancementEnhancement
ConfigurationSingle--SingleSingle
Fall Time19.2 ns--18.5 ns18.5 ns
ID Continuous Drain Current580 mA--590 mA770 mA
Pd Power Dissipation980 mW--240 mW990 mW
Qg Gate Charge800 pC--1.5 nC1.5 nC
Rds on Drain Source Resistance1 Ohms--495 mOhms495 mOhms
Rise Time4.3 ns--8 ns8 ns
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