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Diodes Incorporated DMN67D8LW-7 MOSFETs

MOSFET N-CH 60V 240MA SOT323

1,750 ActiveDiodes IncorporatedDMN67DSOT-323-3$0.09
DMN67D8LW-7 SOT-323-3 package illustration

Same model may have multiple batches, images only for reference.

DMN67D8LW-7
Part Number (MPN)
DMN67D8LW-7
Base Model
Detailed Description
MOSFET N-CH 60V 240MA SOT323
Package
SOT-323-3
Lifecycle Status
Active
Datasheet
PDF DMN67D8LW-7 Datasheet
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Ordering Code Family

DMN67D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN67D8LW-7 MOSFETs technical specifications.

General

Series
DMN67
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
240 mA
Rds on Drain Source Resistance
5 Ohms

Related Parts Comparison (DMN67D8LW-7 vs DMN67D7L-7 vs DMN67D8L-7 vs DMN67D8LW-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Number of Channels1 Channel1 Channel1 Channel1 Channel
RoHSYesYesYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleSingleSingle
ID Continuous Drain Current240 mA210 mA210 mA240 mA
PackageSOT-323-3SOT23-3SOT23-3SC-70,SOT-323
Pd Power Dissipation470 mW570 mW340 mW470 mW
Qg Gate Charge821 pC821 pC821 pC821 pC
Rds on Drain Source Resistance5 Ohms1.5 Ohms1.5 Ohms5 Ohms
TechnologySiSiSiSi
Transistor PolarityN-ChannelN-ChannelN-ChannelN-Channel
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