Diodes Incorporated DMN3065LW-13 MOSFETs
MOSFET N-CH 30V 4A SOT323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3065LW-13
Base Model
Detailed Description
MOSFET N-CH 30V 4A SOT323
Package
SOT-323-3
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN3065LW-13 MOSFETs technical specifications.
General
Series
DMN3065
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
4 A
Rds on Drain Source Resistance
85 mOhms
Related Parts Comparison (DMN3065LW-13 vs DMN3065LW-7 vs DMN2004WKQ-7 vs DMN601WKQ-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 4 A | 4 A | 540 mA | 300 mA |
| Package | SOT-323-3 | SC-70,SOT-323 | SOT-323-3 | SOT-323-3 |
| Pd Power Dissipation | 770 mW | 770 mW | 200 mW | 200 mW |
| Rds on Drain Source Resistance | 85 mOhms | 52 mOhms | 550 mOhms | 2 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.000212 oz | 0.000212 oz | 0.000212 oz | 0.000212 oz |
| Action |
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