Diodes Incorporated DMG1012UW-7 MOSFETs
MOSFET N-CH 20V 1A SOT323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG1012UW-7
Detailed Description
MOSFET N-CH 20V 1A SOT323
Package
SOT-323-3
Lifecycle Status
Active
Datasheet
DMG1012UW-7 Datasheet
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Technical Specifications
Diodes Incorporated DMG1012UW-7 MOSFETs technical specifications.
General
Series
DMG1012
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1 A
Rds on Drain Source Resistance
450 mOhms
Vgs Gate Source Voltage
- 6 V, + 6 V
Alternate Parts Comparison (DMG1012UW-7 vs DMN2004WKQ-7 vs DMN601WKQ-13 vs DMN601WKQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 1 A | 540 mA | 300 mA | 300 mA |
| Package | SOT-323-3 | SOT-323-3 | SOT-323-3 | SOT-323-3 |
| Pd Power Dissipation | 290 mW | 200 mW | 200 mW | 200 mW |
| Rds on Drain Source Resistance | 450 mOhms | 550 mOhms | 2 Ohms | 3 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.000212 oz | 0.000212 oz | 0.000212 oz | 0.000212 oz |
| Action |
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