Diodes Incorporated DMN67D8LDW-13 MOSFETs
MOSFET 2N-CH 60V 0.23A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN67D8LDW-13
Base Model
Detailed Description
MOSFET 2N-CH 60V 0.23A SOT363
Package
SOT-363
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN67D8LDW-13 MOSFETs technical specifications.
General
Series
DMN67
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
230 mA
Rds on Drain Source Resistance
5 Ohms
Alternate Parts Comparison (DMN67D8LDW-13 vs DMN67D7L-7 vs DMN67D8L-7 vs DMN67D8LW-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 230 mA | 210 mA | 210 mA | 240 mA |
| Package | SOT-363 | SOT23-3 | SOT23-3 | SC-70,SOT-323 |
| Pd Power Dissipation | 410 mW | 570 mW | 340 mW | 470 mW |
| Qg Gate Charge | 821 pC | 821 pC | 821 pC | 821 pC |
| Rds on Drain Source Resistance | 5 Ohms | 1.5 Ohms | 1.5 Ohms | 5 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.000265 oz | 0.000282 oz | 0.000282 oz | 0.000212 oz |
| Action |
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