Diodes Incorporated DMN2004WKQ-7 MOSFETs
MOSFET N-CH 20V 540MA SOT323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2004WKQ-7
Detailed Description
MOSFET N-CH 20V 540MA SOT323
Package
SOT-323-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN2004WKQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
540 mA
Rds on Drain Source Resistance
550 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN2004WKQ-7 vs DMN63D8LW-13 vs DMN2065UW-7 vs DMN2055UW-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 540 mA | 380 mA | 3.1 A | 3.1 A |
| Package | SOT-323-3 | SOT-323-3 | SOT-323-3 | SOT-323-3 |
| Pd Power Dissipation | 200 mW | 420 mW | 700 mW | 520 mW |
| Rds on Drain Source Resistance | 550 mOhms | 2.8 Ohms | 56 mOhms | 46 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.000212 oz | 0.000212 oz | 0.000212 oz | 0.000212 oz |
| Vds Drain Source Breakdown Voltage | 20 V | 30 V | 20 V | 20 V |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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