Diodes Incorporated DMN65D8LW-7 MOSFETs
MOSFET N-CH 60V 300MA SOT323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN65D8LW-7
Base Model
Detailed Description
MOSFET N-CH 60V 300MA SOT323
Package
SOT-323
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN65D8LW-7 MOSFETs technical specifications.
General
Series
DMN65
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
300 mA
Rds on Drain Source Resistance
3 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN65D8LW-7 vs DMN65D8LQ-7 vs DMN65D8LDWQ-7 vs DMN65D9L-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | SOT-323 | -- | TSSOP-6 | SOT23-3 |
| Mounting Type | SMD/SMT | Surface Mount | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| Fall Time | 7.3 ns | -- | -- | 22 ns |
| ID Continuous Drain Current | 300 mA | -- | -- | 335 mA |
| Pd Power Dissipation | 300 mW | 540 mW | -- | 270 mW |
| Qg Gate Charge | 870 pC | 870 pC | -- | 400 fC |
| Rds on Drain Source Resistance | 3 Ohms | 3 Ohms | -- | 4 Ohms |
| Rise Time | 2.8 ns | -- | -- | 3.6 ns |
| Action |
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