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Diodes Incorporated DMN61D9UW-7 MOSFETs

MOSFET N-CH 60V 340MA SOT323

1,710,000 ActiveDiodes IncorporatedDMN61DSOT-323$0.08
DMN61D9UW-7 SOT-323 package illustration

Same model may have multiple batches, images only for reference.

DMN61D9UW-7
Part Number (MPN)
DMN61D9UW-7
Base Model
Detailed Description
MOSFET N-CH 60V 340MA SOT323
Package
SOT-323
Lifecycle Status
Active
Datasheet
PDF DMN61D9UW-7 Datasheet
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Ordering Code Family

DMN61D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

11 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN61D9UW-7 MOSFETs technical specifications.

General

Series
DMN61D9U
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
340 mA
Rds on Drain Source Resistance
1.2 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMN61D9UW-7 vs DMN61D9U-7 vs DMN61D8LQ-13 vs DMN61D9UWQ-7)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Number of Channels1 Channel1 Channel1 Channel1 Channel
RoHSYesYesYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleSingleSingle
ID Continuous Drain Current340 mA380 mA470 mA340 mA
PackageSOT-323SOT23-3SOT23-3SOT-323-3
Pd Power Dissipation440 mW540 mW610 mW440 mW
Qg Gate Charge400 pC400 pC740 pC400 pC
Rds on Drain Source Resistance1.2 Ohms2 Ohms1.8 Ohms1.2 Ohms
TechnologySiSiSiSi
Transistor PolarityN-ChannelN-ChannelN-ChannelN-Channel
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