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Diodes Incorporated DMN65D8LFB-7 MOSFETs

MOSFET N-CH 60V 260MA 3DFN

1,620,000 ActiveDiodes IncorporatedDMN65D3DFN$0.08RoHS
DMN65D8LFB-7 3DFN package illustration

Same model may have multiple batches, images only for reference.

DMN65D8LFB-7
Part Number (MPN)
DMN65D8LFB-7
Base Model
Detailed Description
MOSFET N-CH 60V 260MA 3DFN
Package
3DFN
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
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Ordering Code Family

DMN65D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

7 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN65D8LFB-7 MOSFETs technical specifications.

General

Series
DMN65D
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
400 mA
Rds on Drain Source Resistance
3 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMN65D8LFB-7 vs DMN65D8LQ-7 vs DMN65D8LDWQ-7 vs DMN65D9L-7)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesCompliantYesYes
Mounting TypeSMD/SMTSurface Mount--SMD/SMT
Number of Channels1 Channel1 Channel--1 Channel
Channel ModeEnhancementEnhancement--Enhancement
ConfigurationSingleSingle--Single
Package3-UFDFN--TSSOP-6SOT23-3
Pd Power Dissipation430 mW540 mW--270 mW
Rds on Drain Source Resistance3 Ohms3 Ohms--4 Ohms
TechnologySiMOSFET (Metal Oxide)--Si
Transistor PolarityN-ChannelN-Channel--N-Channel
Unit Weight0.002822 oz0.000282 oz--0.000282 oz
Vds Drain Source Breakdown Voltage60 V60 V--60 V
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