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Diodes Incorporated DMN65D9L-7 MOSFETs

MOSFET N-CH 60V 335MA SOT23

659 ActiveDiodes IncorporatedDMN65DSOT23-3$0.04
DMN65D9L-7 SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

DMN65D9L-7
Part Number (MPN)
DMN65D9L-7
Base Model
Detailed Description
MOSFET N-CH 60V 335MA SOT23
Package
SOT23-3
Lifecycle Status
Active
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Ordering Code Family

DMN65D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

7 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN65D9L-7 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
335 mA
Rds on Drain Source Resistance
4 Ohms
Vgs Gate Source Voltage
- 16 V, + 16 V

Related Parts Comparison (DMN65D9L-7 vs DMN65D8LQ-7 vs DMN65D8LDWQ-7 vs DMN65D8LFB-7)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesCompliantYesYes
Mounting TypeSMD/SMTSurface Mount--SMD/SMT
Number of Channels1 Channel1 Channel--1 Channel
Channel ModeEnhancementEnhancement--Enhancement
ConfigurationSingleSingle--Single
PackageSOT23-3--TSSOP-63-UFDFN
Pd Power Dissipation270 mW540 mW--430 mW
Rds on Drain Source Resistance4 Ohms3 Ohms--3 Ohms
TechnologySiMOSFET (Metal Oxide)--Si
Transistor PolarityN-ChannelN-Channel--N-Channel
Unit Weight0.000282 oz0.000282 oz--0.002822 oz
Vds Drain Source Breakdown Voltage60 V60 V--60 V
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