Diodes Incorporated DMN65D9L-7 MOSFETs
MOSFET N-CH 60V 335MA SOT23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN65D9L-7
Base Model
Detailed Description
MOSFET N-CH 60V 335MA SOT23
Package
SOT23-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN65D9L-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
335 mA
Rds on Drain Source Resistance
4 Ohms
Vgs Gate Source Voltage
- 16 V, + 16 V
Alternate Parts Comparison (DMN65D9L-7 vs DMN65D8LQ-7 vs DMN65D8LDWQ-7 vs DMN65D8LFB-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Mounting Type | SMD/SMT | Surface Mount | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| Package | SOT23-3 | -- | TSSOP-6 | 3-UFDFN |
| Pd Power Dissipation | 270 mW | 540 mW | -- | 430 mW |
| Rds on Drain Source Resistance | 4 Ohms | 3 Ohms | -- | 3 Ohms |
| Technology | Si | MOSFET (Metal Oxide) | -- | Si |
| Transistor Polarity | N-Channel | N-Channel | -- | N-Channel |
| Unit Weight | 0.000282 oz | 0.000282 oz | -- | 0.002822 oz |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | -- | 60 V |
| Action |
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