Diodes Incorporated BSS123WQ-7-F MOSFETs
MOSFET N-CH 100V 170MA SOT323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS123WQ-7-F
Detailed Description
MOSFET N-CH 100V 170MA SOT323
Package
SOT-323
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated BSS123WQ-7-F MOSFETs technical specifications.
General
Series
BSS123W
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
170 mA
Rds on Drain Source Resistance
6 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (BSS123WQ-7-F vs BSS138W-7-F vs DMG1012UWQ-7 vs DMN2058UW-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-323 | SOT323-3 | SOT-323 | SOT-323 |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| ID Continuous Drain Current | 170 mA | 200 mA | -- | 4.6 A |
| Pd Power Dissipation | 200 mW | 200 mW | -- | 1.13 W |
| Rds on Drain Source Resistance | 6 Ohms | 3.5 Ohms | -- | 35 mOhms |
| Technology | Si | Si | -- | Si |
| Transistor Polarity | N-Channel | N-Channel | -- | N-Channel |
| Typical Turn Off Delay Time | 13 ns | 20 ns | -- | 9.9 ns |
| Action |
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