Diodes Incorporated DMN30H4D0LFDE-7 MOSFETs
MOSFET N-CH 300V 550MA 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN30H4D0LFDE-7
Base Model
Detailed Description
MOSFET N-CH 300V 550MA 6UDFN
Package
DFN-2020-6
Lifecycle Status
Active
Datasheet
DMN30H4D0LFDE-7 Datasheet
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Technical Specifications
Diodes Incorporated DMN30H4D0LFDE-7 MOSFETs technical specifications.
General
Series
DMN30
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
300 V
ID Continuous Drain Current
550 mA
Rds on Drain Source Resistance
2.3 Ohms
Related Parts Comparison (DMN30H4D0LFDE-7 vs DMN30H4D0L-7 vs DMN30H4D0L-13 vs DMN2013UFDE-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DFN-2020-6 | SOT23-3 | SOT23-3 | DFN-2020-6 |
| Series | DMN30 | DMN30 | DMN30 | -- |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| Fall Time | 17.5 ns | 17.5 ns | 17.5 ns | -- |
| ID Continuous Drain Current | 550 mA | 250 mA | 550 mA | -- |
| Pd Power Dissipation | 1.98 W | 310 mW | 630 mW | -- |
| Qg Gate Charge | 7.6 nC | 7.6 nC | 7.6 nC | -- |
| Rds on Drain Source Resistance | 2.3 Ohms | 4 Ohms | 4 Ohms | -- |
| Action |
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