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Diodes Incorporated DMP2160UFDBQ-7 MOSFETs

MOSFET 2P-CH 20V 3.8A 6UDFN

3,000 ActiveDiodes IncorporatedDMP2160UFDBDFN-2020-6$0.30
DMP2160UFDBQ-7 DFN-2020-6 package illustration

Same model may have multiple batches, images only for reference.

DMP2160UFDBQ-7
Part Number (MPN)
DMP2160UFDBQ-7
Base Model
Detailed Description
MOSFET 2P-CH 20V 3.8A 6UDFN
Package
DFN-2020-6
Lifecycle Status
Active
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Ordering Code Family

DMP2160UFDB groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMP2160UFDBQ-7 MOSFETs technical specifications.

General

Series
DMP2160
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
3.8 A
Rds on Drain Source Resistance
68 mOhms

Alternate Parts Comparison (DMP2160UFDBQ-7 vs DMP2160UFDB-7 vs DMP1055UFDB-7 vs DMP2040UFDF-7)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesROHS3 CompliantYesYes
PackageDFN-2020-6Tape & Reel (TR)DFN-2020-6DFN-2020-6
Mounting TypeSMD/SMTSurface Mount--SMD/SMT
Operating Temperature- 55°C ~ + 150°C-55°C ~ 150°C (TJ)--- 55°C ~ + 150°C
Number of Channels2 Channel2--1 Channel
Channel ModeEnhancementEnhancement--Enhancement
ConfigurationDual2 P-Channel (Dual)--Single
ID Continuous Drain Current3.8 A----6.1 A
Pd Power Dissipation1.4 W----1.8 W
Qg Gate Charge6.5 nC----8.6 nC
Rds on Drain Source Resistance68 mOhms----53 mOhms
TechnologySiMOSFET (Metal Oxide)--Si
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