Diodes Incorporated DMT3020LFDF-7 MOSFETs
MOSFET N-CH 30V 8.4A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT3020LFDF-7
Detailed Description
MOSFET N-CH 30V 8.4A 6UDFN
Package
DFN-2020-6
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMT3020LFDF-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
8.4 A
Rds on Drain Source Resistance
17 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMT3020LFDF-7 vs DMN2013UFDE-7 vs DMP1055UFDB-7 vs DMN2015UFDE-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| ID Continuous Drain Current | 8.4 A | -- | -- | -- |
| Pd Power Dissipation | 1.8 W | -- | -- | -- |
| Qg Gate Charge | 7 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 17 mOhms | -- | -- | -- |
| Technology | Si | -- | -- | -- |
| Action |
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