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Diodes Incorporated DMN30H4D0L-7 MOSFETs

MOSFET N-CH 300V 250MA SOT23

360,000 ActiveDiodes IncorporatedDMN30HSOT-23$0.42RoHS
DMN30H4D0L-7 SOT-23 package illustration

Same model may have multiple batches, images only for reference.

DMN30H4D0L-7
Part Number (MPN)
DMN30H4D0L-7
Base Model
Detailed Description
MOSFET N-CH 300V 250MA SOT23
Package
SOT-23
Lifecycle Status
Active
RoHS State
RoHS Compliant
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Ordering Code Family

DMN30H groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN30H4D0L-7 MOSFETs technical specifications.

General

Series
DMN30
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
300 V
ID Continuous Drain Current
250 mA
Rds on Drain Source Resistance
4 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMN30H4D0L-7 vs DMN30H4D0L-13 vs DMN30H4D0LFDE-7 vs DMN2053U-7)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Number of Channels1 Channel1 Channel1 Channel1 Channel
RoHSYesYesYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleSingleSingle
Fall Time17.5 ns17.5 ns17.5 ns3.8 ns
ID Continuous Drain Current250 mA550 mA550 mA6.5 A
PackageSOT23-3SOT23-3DFN-2020-6SOT23-3
Pd Power Dissipation310 mW630 mW1.98 W1.3 W
Qg Gate Charge7.6 nC7.6 nC7.6 nC4.6 nC
Rds on Drain Source Resistance4 Ohms4 Ohms2.3 Ohms29 mOhms
Rise Time4.7 ns4.7 ns4.7 ns2.9 ns
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