Diodes Incorporated DMN3032LFDBQ-13 MOSFETs
MOSFET 2N-CH 30V 6.2A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3032LFDBQ-13
Base Model
Detailed Description
MOSFET 2N-CH 30V 6.2A 6UDFN
Package
DFN-2020-6
Lifecycle Status
Active
Datasheet
DMN3032LFDBQ-13 Datasheet
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Technical Specifications
Diodes Incorporated DMN3032LFDBQ-13 MOSFETs technical specifications.
General
Series
DMN3032
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
6.2 A
Rds on Drain Source Resistance
30 mOhms
Related Parts Comparison (DMN3032LFDBQ-13 vs DMN3032LFDB-7 vs DMN3032LFDBQ-7 vs DMN2013UFDE-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 |
| Series | DMN3032 | DMN3032 | DMN3032 | -- |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Dual | Dual | Dual | -- |
| ID Continuous Drain Current | 6.2 A | 6.2 A | 6.2 A | -- |
| Pd Power Dissipation | 1.7 W | 1.7 W | 1.7 W | -- |
| Qg Gate Charge | 10.6 nC | 10.6 nC | 10.6 nC | -- |
| Rds on Drain Source Resistance | 30 mOhms | 30 mOhms | 30 mOhms | -- |
| Action |
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