Diodes Incorporated DMN1025UFDB-7 MOSFETs
Trans MOSFET N-CH 12V 6.9A 6-Pin UDFN EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN1025UFDB-7
Detailed Description
Trans MOSFET N-CH 12V 6.9A 6-Pin UDFN EP T/R
Package
DFN-2020-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN1025UFDB-7 MOSFETs technical specifications.
General
Series
DMN1025
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
6.9 A
Rds on Drain Source Resistance
25 mOhms, 25 mOhms
Alternate Parts Comparison (DMN1025UFDB-7 vs DMN2013UFDE-7 vs DMN2015UFDE-7 vs DMN3025LFDF-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | - 55°C ~ + 150°C |
| Number of Channels | 2 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Dual | -- | -- | Single |
| ID Continuous Drain Current | 6.9 A | -- | -- | 8.3 A |
| Pd Power Dissipation | 1.7 W | -- | -- | 2.1 W |
| Qg Gate Charge | 12.6 nC | -- | -- | 13.2 nC |
| Rds on Drain Source Resistance | 25 mOhms, 25 mOhms | -- | -- | 20.5 mOhms |
| Technology | Si | -- | -- | Si |
| Action |
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