Diodes Incorporated DMN3025LFDF-7 MOSFETs
MOSFET N-CH 30V 9.9A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3025LFDF-7
Detailed Description
MOSFET N-CH 30V 9.9A 6UDFN
Package
DFN-2020-6
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN3025LFDF-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
8.3 A
Rds on Drain Source Resistance
20.5 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN3025LFDF-7 vs DMN2013UFDE-7 vs DMN2015UFDE-7 vs DMN6040SFDE-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 | DFN-2020-6 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Single | -- | -- | Single |
| ID Continuous Drain Current | 8.3 A | -- | -- | 5.3 A |
| Pd Power Dissipation | 2.1 W | -- | -- | 660 mW |
| Qg Gate Charge | 13.2 nC | -- | -- | 22.4 nC |
| Rds on Drain Source Resistance | 20.5 mOhms | -- | -- | 30 mOhms |
| Technology | Si | -- | -- | Si |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.