Diodes Incorporated DMC2053UVTQ-7 MOSFETs
MOSFET N/P-CH 20V 4.6A TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMC2053UVTQ-7
Detailed Description
MOSFET N/P-CH 20V 4.6A TSOT26
Package
TSOT-26
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMC2053UVTQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
4.6 A, 3.2 A
Rds on Drain Source Resistance
35 mOhms, 74 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Threshold Voltage
1 V
Alternate Parts Comparison (DMC2053UVTQ-7 vs DMC1229UFDB-7 vs DMC3021LK4-13 vs DMC31D5UDJ-7B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Dual | Dual |
| Fall Time | 3.6 ns, 18 ns | 4.1 ns, 26.4 ns | 6.3 ns | 7.5 ns, 8.7 ns |
| ID Continuous Drain Current | 4.6 A, 3.2 A | 3.8 A, 5.6 A | 9.4 A, 6.8 A | 220 mA, 200 mA |
| Package | TSOT-26 | DFN2020-6 | TO-252-5 | SOT-963-6 |
| Pd Power Dissipation | 700 mW | 1.4 W | 2.75 W | 350 mW |
| Qg Gate Charge | 3.6 nC, 5.9 nC | 10.5 nC, 10.7 nC | 17.4 nC | 380 pC, 350 pC |
| Rds on Drain Source Resistance | 35 mOhms, 74 mOhms | 29 mOhms, 61 mOhms | 32 mOhms, 53 mOhms | 2.3 Ohms, 5.1 Ohms |
| Rise Time | 3 ns, 7.8 ns | 10.5 ns, 11.5 ns | 6.6 ns | 2.2 ns, 5.2 ns |
| Action |
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