Diodes Incorporated DMP2040UVT-7 MOSFETs
MOSFET P-CH 20V TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP2040UVT-7
Detailed Description
MOSFET P-CH 20V TSOT26
Package
TSOT-26
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMP2040UVT-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
13 A
Rds on Drain Source Resistance
38 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (DMP2040UVT-7 vs DMP4015SK3Q-13 vs DMP4015SSSQ-13 vs DMP4025SFGQ-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 14.6 ns | 137.9 nS | 137.9 ns | 30.9 ns |
| ID Continuous Drain Current | 13 A | 35 A | 10.1 A | 7.2 A |
| Package | TSOT-26 | TO-252-3 | SOIC-8 | PowerVDFN-8 |
| Pd Power Dissipation | 1.5 W | 3.5 W | 1.82 W | 810 mW |
| Qg Gate Charge | 19 nC | 47.5 nC | 47.5 nC | 33.7 nC |
| Rds on Drain Source Resistance | 38 mOhms | 11 mOhms | 15 mOhms | 25 mOhms |
| Rise Time | 7.7 ns | 10 ns | 10 ns | 14.7 ns |
| Action |
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