Diodes Incorporated DMC1229UFDB-7 MOSFETs
MOSFET N/P-CH 12V 5.6A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMC1229UFDB-7
Detailed Description
MOSFET N/P-CH 12V 5.6A 6UDFN
Package
DFN2020-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMC1229UFDB-7 MOSFETs technical specifications.
General
Series
DMC1229
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
3.8 A, 5.6 A
Rds on Drain Source Resistance
29 mOhms, 61 mOhms
Alternate Parts Comparison (DMC1229UFDB-7 vs DMC2053UVTQ-7 vs DMC3025LSD-13 vs DMC2700UDMQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Dual | Dual |
| Fall Time | 4.1 ns, 26.4 ns | 3.6 ns, 18 ns | 5.8 ns, 12.4 ns | 12.3 ns, 20.7 ns |
| ID Continuous Drain Current | 3.8 A, 5.6 A | 4.6 A, 3.2 A | 6.5 A, 4.2 A | 1.34 A, 1.14 A |
| Package | DFN2020-6 | TSOT-26 | SOIC-8 | SOT-23-6 |
| Pd Power Dissipation | 1.4 W | 700 mW | 1.2 W | 1.12 W |
| Qg Gate Charge | 10.5 nC, 10.7 nC | 3.6 nC, 5.9 nC | 9.8 nC, 10.5 nC | 736.6 pC, 622.4 pC |
| Rds on Drain Source Resistance | 29 mOhms, 61 mOhms | 35 mOhms, 74 mOhms | 15 mOhms, 38 mOhms | 300 mOhms, 500 mOhms |
| Rise Time | 10.5 ns, 11.5 ns | 3 ns, 7.8 ns | 4.2 ns, 4.9 ns | 7.4 ns, 8.1 ns |
| Action |
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