Diodes Incorporated DMC2710UVT-7 MOSFETs
MOSFET N/P-CH 20V 1.2A TSOT23-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMC2710UVT-7
Detailed Description
MOSFET N/P-CH 20V 1.2A TSOT23-6
Package
TSOT-26
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMC2710UVT-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1.2 A, 900 mA
Rds on Drain Source Resistance
400 mOhms, 700 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (DMC2710UVT-7 vs DMC2053UVTQ-7 vs DMC3025LSD-13 vs DMC2038LVT-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Dual | Dual |
| Fall Time | 174 ns, 445 ns | 3.6 ns, 18 ns | 5.8 ns, 12.4 ns | 8 ns, 13 ns |
| ID Continuous Drain Current | 1.2 A, 900 mA | 4.6 A, 3.2 A | 6.5 A, 4.2 A | 4.5 A, 3.1 A |
| Package | TSOT-26 | TSOT-26 | SOIC-8 | TSOT-26-6 |
| Pd Power Dissipation | 800 mW | 700 mW | 1.2 W | 1.1 W |
| Qg Gate Charge | 600 fC, 700 fC | 3.6 nC, 5.9 nC | 9.8 nC, 10.5 nC | 12 nC, 14 nC |
| Rds on Drain Source Resistance | 400 mOhms, 700 mOhms | 35 mOhms, 74 mOhms | 15 mOhms, 38 mOhms | 35 mOhms, 74 mOhms |
| Rise Time | 3.1 ns, 2.8 ns | 3 ns, 7.8 ns | 4.2 ns, 4.9 ns | 8 ns, 12 ns |
| Action |
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