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CEL (California Eastern Laboratories) NESG7030M04-A RF BJT

NESG7030M04-A by CEL (California Eastern Laboratories) · RF BJT · M04

In StockCEL (California Eastern Laboratories)M04
NESG7030M04-A M04 package illustration

Same model may have multiple batches, images only for reference.

NESG7030M04-A
Part Number (MPN)
NESG7030M04-A
Package
M04
Lifecycle Status
Obsolete
Datasheet
PDF NESG7030M04-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NESG7030M04-A RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
200 @ 5mA, 2V
Frequency Transition
5.8 GHz
Gain
14dB ~ 21dB
Noise Figure Db Typ F
0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
Power Max
125 mW

Alternate Parts Comparison (NESG7030M04-A vs NESG2107M33-A vs NESG260234-T1-AZ vs NESG2030M04-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current Collector IC Max30 mA100mA600mA35 mA
Dc Current Gain Hfe Min IC Vce200 @ 5mA, 2V140 @ 5mA, 1V80 @ 100mA, 3V200 @ 5mA, 2V
Power Max125 mW130mW1.9W80 mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max4.3 V5V9.2V2.3 V
Package / CaseBulk3-SMD, Flat Lead--Bulk
Operating Temperature150°C (TJ)150°C (TJ)--150°C (TJ)
Lifecycle StatusObsolete--ObsoleteObsolete
Frequency Transition5.8 GHz10GHz--60 GHz
Gain14dB ~ 21dB7dB ~ 10dB--16dB
Noise Figure Db Typ F0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz0.9dB ~ 1.5dB @ 2GHz--0.9dB ~ 1.1dB @ 2GHz
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