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CEL (California Eastern Laboratories) NESG2030M04-A RF BJT

NESG2030M04-A by CEL (California Eastern Laboratories) · RF BJT · M04

In StockCEL (California Eastern Laboratories)M04
NESG2030M04-A M04 package illustration

Same model may have multiple batches, images only for reference.

NESG2030M04-A
Part Number (MPN)
NESG2030M04-A
Package
M04
Lifecycle Status
Obsolete
Datasheet
PDF NESG2030M04-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NESG2030M04-A RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
35 mA
Dc Current Gain Hfe Min IC Vce
200 @ 5mA, 2V
Frequency Transition
60 GHz
Gain
16dB
Noise Figure Db Typ F
0.9dB ~ 1.1dB @ 2GHz
Power Max
80 mW

Alternate Parts Comparison (NESG2030M04-A vs NESG2107M33-A vs NESG260234-T1-AZ vs NESG2046M33-T3-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current Collector IC Max35 mA100mA600mA40 mA
Dc Current Gain Hfe Min IC Vce200 @ 5mA, 2V140 @ 5mA, 1V80 @ 100mA, 3V140 @ 2mA, 1V
Power Max80 mW130mW1.9W130 mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max2.3 V5V9.2V5 V
Package / CaseBulk3-SMD, Flat Lead--Tape & Reel
Operating Temperature150°C (TJ)150°C (TJ)--150°C (TJ)
Lifecycle StatusObsolete--ObsoleteObsolete
Frequency Transition60 GHz10GHz--18 GHz
Gain16dB7dB ~ 10dB--9.5dB ~ 11.5dB
Noise Figure Db Typ F0.9dB ~ 1.1dB @ 2GHz0.9dB ~ 1.5dB @ 2GHz--0.8dB ~ 1.5dB @ 2GHz
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