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CEL (California Eastern Laboratories) NESG260234-T1-AZ RF BJT

NESG260234-T1-AZ by CEL (California Eastern Laboratories) · RF BJT · TO-243AA

In StockCEL (California Eastern Laboratories)TO-243AA
NESG260234-T1-AZ TO-243AA package illustration

Same model may have multiple batches, images only for reference.

NESG260234-T1-AZ
Part Number (MPN)
NESG260234-T1-AZ
Package
TO-243AA
Lifecycle Status
Obsolete
Datasheet
PDF NESG260234-T1-AZ Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NESG260234-T1-AZ RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
9.2V
Power Max
1.9W
Dc Current Gain Hfe Min IC Vce
80 @ 100mA, 3V
Current Collector IC Max
600mA
Package
TO-243AA

Alternate Parts Comparison (NESG260234-T1-AZ vs NESG2107M33-A vs NESG2030M04-A vs NESG2046M33-T3-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current Collector IC Max600mA100mA35 mA40 mA
Dc Current Gain Hfe Min IC Vce80 @ 100mA, 3V140 @ 5mA, 1V200 @ 5mA, 2V140 @ 2mA, 1V
Power Max1.9W130mW80 mW130 mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max9.2V5V2.3 V5 V
Lifecycle StatusObsolete--ObsoleteObsolete
Package / Case--3-SMD, Flat LeadBulkTape & Reel
Operating Temperature--150°C (TJ)150°C (TJ)150°C (TJ)
Frequency Transition--10GHz60 GHz18 GHz
Gain--7dB ~ 10dB16dB9.5dB ~ 11.5dB
Noise Figure Db Typ F--0.9dB ~ 1.5dB @ 2GHz0.9dB ~ 1.1dB @ 2GHz0.8dB ~ 1.5dB @ 2GHz
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