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CEL (California Eastern Laboratories) 2SC3585-T1B-A RF BJT

2SC3585-T1B-A by CEL (California Eastern Laboratories) · RF BJT · SOT23-3

In StockCEL (California Eastern Laboratories)SOT23-3
2SC3585-T1B-A SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

2SC3585-T1B-A
Part Number (MPN)
2SC3585-T1B-A
Package
SOT23-3
Lifecycle Status
Obsolete
Datasheet
PDF 2SC3585-T1B-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) 2SC3585-T1B-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
10V
Frequency Transition
10GHz
Noise Figure Db Typ F
1.8dB @ 2GHz
Gain
9dB
Power Max
200mW

Related Parts Comparison (2SC3585-T1B-A vs 2SC5015-T1-A vs 2SC5508-T2-A vs NESG2107M33-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Current Collector IC Max35mA30mA35mA100mA
Dc Current Gain Hfe Min IC Vce50 @ 10mA, 6V75 @ 10mA, 3V50 @ 5mA, 2V140 @ 5mA, 1V
Frequency Transition10GHz12GHz25GHz10GHz
Gain9dB11dB17dB7dB ~ 10dB
Noise Figure Db Typ F1.8dB @ 2GHz1.5dB @ 2GHz1.1dB @ 2GHz0.9dB ~ 1.5dB @ 2GHz
Power Max200mW150mW115mW130mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max10V6V3.3V5V
Package / Case--SC-82A, SOT-343SOT-343F3-SMD, Flat Lead
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