CEL (California Eastern Laboratories) NE85633-T1B RF BJT
NE85633-T1B by CEL (California Eastern Laboratories) · RF BJT · SOT23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NE85633-T1B
Package
SOT23-3
Lifecycle Status
Active
Datasheet
NE85633-T1B Datasheet
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Technical Specifications
CEL (California Eastern Laboratories) NE85633-T1B RF BJT technical specifications.
General
RoHS
Yes
Operating Temperature
- 65°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
12 V
Collector Base Voltage Vcbo
20 V
Emitter Base Voltage Vebo
3 V
Maximum Dc Collector Current
100 mA
Pd Power Dissipation
200 mW
Gain Bandwidth Product Ft
7 GHz
Alternate Parts Comparison (NE85633-T1B vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | - 65°C ~ + 150°C | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT23-3 | Tape & Reel (TR) | Tape & Reel (TR) | SOT-523 |
| Mounting Type | -- | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | -- | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | -- | 500mA | 250mA | 35mA |
| Dc Current Gain Hfe Min IC Vce | -- | 40 @ 100mA, 3V | 60 @ 50mA, 10V | 80 @ 5mA, 3V |
| Gain | -- | 12dB | 8.3dB | 9.6dB |
| Power Max | -- | 735mW | 2W | 100mW |
| Transistor Type | -- | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | -- | 5V | 15V | 10V |
| Action |
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