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CEL (California Eastern Laboratories) NE68033-T1B-A RF BJT

NE68033-T1B-A by CEL (California Eastern Laboratories) · RF BJT · SOT23-3

In Stock ActiveCEL (California Eastern Laboratories)SOT23-3
NE68033-T1B-A SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

NE68033-T1B-A
Part Number (MPN)
NE68033-T1B-A
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDF NE68033-T1B-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE68033-T1B-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
Operating Frequency
2 GHz
Collector Emitter Voltage Vceo Max
10 V
Emitter Base Voltage Vebo
1.5 V
Continuous Collector Current
35 mA

Related Parts Comparison (NE68033-T1B-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 65°C ~ + 150°C150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
PackageSOT23-3Tape & Reel (TR)Tape & Reel (TR)SOT-523
Transistor TypeBipolarNPNNPNNPN
Lifecycle Status--ObsoleteObsoleteObsolete
Current Collector IC Max--500mA250mA35mA
Dc Current Gain Hfe Min IC Vce--40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain--12dB8.3dB9.6dB
Power Max--735mW2W100mW
Voltage Collector Emitter Breakdown Max--5V15V10V
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