Vishay SUP85N10-10-E3 MOSFETs
N-CH MOSFET 100V 85A 10.5mR TO-220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SUP85N10-10-E3
Base Model
Detailed Description
N-CH MOSFET 100V 85A 10.5mR TO-220AB
Package
TO-220AB
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SUP85N10-10-E3 MOSFETs technical specifications.
General
Series
SUP
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
85 A
Rds on Drain Source Resistance
8.5 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (SUP85N10-10-E3 vs SUP85N15-21-E3 vs SUP70040E-GE3 vs SUP90140E-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Series | SUP | -- | TrenchFET® | ThunderFET® |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Threshold Voltage | 1 V | -- | 4 V | 4 V |
| Number of Pins | -- | 3 | 3 | 3 |
| Number of Elements | -- | 1 | 1 | 1 |
| Terminal Position | -- | SINGLE | SINGLE | SINGLE |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SIHA12N60E-E3VishayPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,…
SUP90140E-GE3VishayPower Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET…