Vishay SUP70040E-GE3 MOSFETs
Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SUP70040E-GE3
Detailed Description
Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Package
TO-220AB
Lifecycle Status
Active
Datasheet
SUP70040E-GE3 Datasheet
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Technical Specifications
Vishay SUP70040E-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Pins
3
Package / Case
Bulk
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
120 A
Current Continuous Drain ID 25 C
120A (Tc)
Drain to Source Resistance
3.2mO
Related Parts Comparison (SUP70040E-GE3 vs SUP85N10-10-E3 vs SUP53P06-20-E3 vs SUP90140E-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Series | TrenchFET® | SUP | TrenchFET® | ThunderFET® |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| RoHS | Yes | Yes | Yes | Yes |
| Technology | MOSFET (Metal Oxide) | Si | Si | MOSFET (Metal Oxide) |
| Threshold Voltage | 4 V | 1 V | -1 V | 4 V |
| Package / Case | Bulk | -- | TO-220AB | Tube |
| Operating Temperature | -55°C ~ 175°C (TJ) | -- | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Pins | 3 | -- | 3 | 3 |
| Lifecycle Status | Active | -- | Active | Active |
| Continuous Drain Current ID | 120 A | -- | 53 A | 90 A |
| Current Continuous Drain ID 25 C | 120A (Tc) | -- | 9.2A (Ta), 53A (Tc) | 90A (Tc) |
| Drain to Source Resistance | 3.2mO | -- | 19.5mR | 13.8mO |
| Action |
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