Vishay SIHP4N80E-GE3 MOSFETs
E Series Power MOSFET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHP4N80E-GE3
Detailed Description
E Series Power MOSFET
Package
TO-220AB
Lifecycle Status
Active
Datasheet
SIHP4N80E-GE3 Datasheet
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Technical Specifications
Vishay SIHP4N80E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
800 V
ID Continuous Drain Current
4.3 A
Rds on Drain Source Resistance
1.1 Ohms
Alternate Parts Comparison (SIHP4N80E-GE3 vs SIHP15N60E-E3 vs IRFBF20PBF vs SUP70040E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Series | E | E | -- | TrenchFET® |
| Mounting Type | Through Hole | Through Hole | -- | Through Hole |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | -55°C ~ 175°C (TJ) |
| Package | TO-220AB | TO-220AB | TO-220AB | -- |
| Technology | Si | Si | -- | MOSFET (Metal Oxide) |
| Action |
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