Vishay SQJA96EP-T1_GE3 MOSFETs
Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJA96EP-T1_GE3
Detailed Description
Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
SQJA96EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJA96EP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Compliant
Number of Pins
4
Number of Channels
1
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
30 A
Current Continuous Drain ID 25 C
30A (Tc)
Related Parts Comparison (SQJA96EP-T1_GE3 vs SIDR170DP-T1-RE3 vs SIR878BDP-T1-RE3 vs SI7431DP-T1-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | TrenchFET® Gen IV | TrenchFET® Gen IV | TrenchFET® |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Compliant | ROHS3 Compliant | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 30A (Tc) | 23.2A (Ta), 95A (Tc) | 12A (Ta), 42.5A (Tc) | 2.2A (Ta) |
| Drain to Source Voltage Vdss | 80 V | 100 V | 100 V | -200 V |
| Drive Voltage Max Rds on Min Rds on | 10 V | 4.5V, 10V | 7.5V, 10V | 6V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 25 nC @ 10 V | 140 nC @ 10 V | 38 nC @ 10 V | 135 nC @ 10 V |
| Rds on Max ID Vgs | 21.5mOhm @ 10A, 10V | 4.8mOhm @ 20A, 10V | 14.4mOhm @ 15A, 10V | 174mOhm @ 3.8A, 10V |
| Action |
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